Eta Research is the first manufacturer of C-doped semi-insulating GaN wafers in China, and has achieved mass production of 2" and 4" GaN wafers. At present, the resistivity of C-doped semi-insulating wafers produced by Eta reaches more than 1E12 ohm-cm; the dislocation density is generally between 5E5 and 9E5cm²; the surface roughness is less than 0.3nm. C doping is more stable than other dopants in the MOCVD epitaxial growth process. Eta Research will launch a promotional campaign for C-doped semi-insulating GaN wafers from April 1 to April 30, 2023.

2" C-doped Semi-insulating GaN Wafers

Note: We have limited available wafers in stock, the sooner you contact us, the sooner you can be served.

Our 4" GaN wafer is in hot sale and needs to be ordered in advance.

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