4'' GaN wafer
4 inch GaN wafer substrate
| Diameter | 100.0mm ± 0.3mm |
| Thickness | 450 ± 30 μm |
| Orientation | (0001) Ga-face c-plane (standard); (000-1) N-face (optional) |
| Minor Orientation Flat Length | 18.0 ± 1 mm |
| TTV | ≤ 30 μm |
| Warp | ≤ 80 μm |
| Bow | -40 to 20 μm |
| Doping | Resistivity |
| N-type (Silicon) | ≤ 0.02 ohm-cm |
| UID | ≤ 0.2 ohm-cm |
| Semi-Insulating (Carbon) | > 1E8 ohm-cm |
