GaN is a wide-band gap material, which has similar performance advantages to SiC, but it is more likely to reduce costs. The industry believes that in the next few years, the cost of GaN power devices is expected to be reduced to the same price as silicon MOSFET, IGBT and rectifier.

GaN power electronic devices have the advantages of higher working voltage, higher switching frequency, lower on-resistance, and can be compatible with the silicon-based semiconductor integrated circuit process with extremely low cost and high technology maturity. They have great development potential in the new generation of high-efficiency and small-scale power conversion and management systems, electric locomotives, industrial motors and other fields.

Due to the growing demand for high-speed, high-temperature and high-power semiconductor devices, the semiconductor industry has reconsidered the design and materials used in semiconductors. With the continuous emergence of various faster and smaller computing devices, it is difficult for silicon materials to maintain Moore's law. GaN has unique advantages, such as excellent noise coefficient, high maximum current, high breakdown voltage, high oscillation frequency, etc. It provides unique applications for many fields, such as military, aerospace, national defense, automobile, and high power fields such as industry, solar energy, power generation and wind power.

Due to the use of GaN optoelectronic semiconductors in military, aerospace, national defense and consumer electronics, optoelectronic semiconductors have become the main product type in the global GaN semiconductor device market and occupy an absolute dominant position. Among them, power semiconductor devices will become the fastest growing devices in the future with the growth of industrial applications for high-power devices.