As the world's leading free-standing GaN substrate manufacturer, Eta Research is the only company in China that can produce 4-inch free-standing GaN substrates on a large scale. Our 4-inch gallium nitride (GaN) self-supporting substrate is a monocrystalline GaN substrate produced by self-developed HVPE equipment, and the specific parameters can be customized according to customer needs.

1. Product display

      2. Product detail

According to the different doping, the substrates are divided into the following three types:

     3. Production process

HVPE crystal growth——cutting——grinding——polishing

     4. Laser mark

 Schematic diagram of laser mark for major flat 

      5. Electrical resistivity test

                                     Resistivity test point 

The resistivity test point of N-type doped GaN wafer products is shown in the above figure, and the average value of 17 points is taken. Eta takes advantage of SEMILAB non-contact eddy current resistivity tester (model: 1510EA-SA). N-type GaN substrates with different doping concentrations can be customized for customers, as shown in the following table:

For the semi-insulating GaN substrates, Eta entrusts the third party testing institution to adopt the German COREMA-WT equipment to test the resistivity. The tested resistivity is more than 1.00E12 ohm-cm;

       6. Measurement location and equipment for some parameters

       7. Technical specification